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www.DataSheet4U.com TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 5.0±0.2 Unit: mm 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to small and thin package Hi.
URCE 5,6,7,8：DRAIN 0.8±0.1 JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) Circuit Configuration W mJ A mJ °C °C 1 2 3 4 8 7 6 5 Note: For Notes 1to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with caution. 1 2004-09-07 3.5±0.2 Maximum Ratings (Ta .
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|---|---|---|---|---|
| 1 | TPCA8010-H |
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| 2 | TPCA8011-H |
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| 3 | TPCA8014-H |
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| 4 | TPCA8015-H |
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| 5 | TPCA8019-H |
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| 6 | TPCA8003-H |
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| 7 | TPCA8004-H |
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| 8 | TPCA8005-H |
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| 9 | TPCA8006-H |
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| 10 | TPCA8007-H |
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| 11 | TPCA8008-H |
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| 12 | TPCA8009-H |
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