TPCA8011-H - Toshiba Semiconductor

TPCA8011-H Silicon N-Channel MOSFET

TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications Unit: mm 0.5±0.1 1.27 0.4±0.1 8 5 0.05 M A 6.0±0.3 5.0±0.2 • Small footprint due to a small and thin package • High speed switching • Small g.

Features

r dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit 20 V 20 V ±12 V 40 A 120 45 W 2.8 W 1.6 W 208 mJ 40 A 2.0 mJ 150 °C −55 to 150 °C 8 5 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC JEITA TOSHIBA ― ― 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8765 1234 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads .