TPCA8009-H - Toshiba Semiconductor

TPCA8009-H High Speed Switching Applications

TPCA8009-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8009-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A 5.0±0.2 • • • • • • • Small footprint due to a small and thin package High-speed switching Sm.

Features

Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.068 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 34 7 1.5 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 0.6±0.1 1.1±0.2 0.05 S 0.166±0.05 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the applic.