TK39N60X - Toshiba

TK39N60X Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS-H) TK39N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Int.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain c.