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Low power loss, high efficiency. • PNP Epitaxial Silicon Transistor • High current capability, low forward voltage drop. • High surge capability. FEATURES• Guardring for overvoltage protection. Epitaxial Planar Die Construction high-speed switching. • Ultra Complementary NPN Type Available epitaxial planar(TK3904LLD03) chip, metal silicon junction. • Silicon.
Guardring for overvoltage protection. Epitaxial Planar Die Construction high-speed switching.
• Ultra Complementary NPN Type Available epitaxial planar(TK3904LLD03) chip, metal silicon junction.
• Silicon Ultra-Small Surface Mount Package parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228 Also Available in Lead Free Version
WILLAS
Pb Free Produ
Features
Package outline
SOD-123H
C
WBFBP-03D
(1.0×1.0×0.5) unit: mm
TOP
0.146(3.7) 0.130(3.3)
0.012(0.3) Typ.
B
1. BASE 2. EMITTER 3. COLLECTOR
E C
0.071(1.8) 0.056(1.4)
• RoHS product for packing code suffix "G"
Halogen.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 2 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 3 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 4 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TK39A60W |
INCHANGE |
N-Channel MOSFET |
|
| 6 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 7 | TK39J60W |
INCHANGE |
N-Channel MOSFET |
|
| 8 | TK39J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | TK39J60W5 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | TK39N60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | TK39N60W |
INCHANGE |
N-Channel MOSFET |
|
| 12 | TK39N60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|