optimize board space. NPN Epitaxial Silicon Transistor power loss, high efficiency. • Low • High current capability, low forward voltage drop. FEATURES • High surge capability. for overvoltage protection. • Guardring Epitaxial Planar Die Construction Ultra high-speed switching. • Complementary PNP Type Available (TK3906LLD03) Silicon epitaxial planar • Ultra.
• High surge capability. for overvoltage protection.
• Guardring Epitaxial Planar Die Construction Ultra high-speed switching.
• Complementary PNP Type Available (TK3906LLD03) Silicon epitaxial planar
• Ultra-Small Surface Mount Package chip, metal silicon junction.
• Lead-free parts meet environmental standards of Also Available in Lead Free Version
MIL-STD-19500 /228
• RoHS product for packing code suffix "G" APPLICATION Halogen free product for packing code suffix "H"
WILLAS
Pb Free Prod
Features
Package outline
SOD-123H
C
WBFBP-03D
(1.0×1.0×0.5) unit: mm
TOP 0.130(3.3) B E C BACK E
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors | |
2 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
3 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors | |
4 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK39A60W |
INCHANGE |
N-Channel MOSFET | |
6 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | TK39J60W |
INCHANGE |
N-Channel MOSFET | |
8 | TK39J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK39J60W5 |
INCHANGE |
N-Channel MOSFET | |
10 | TK39N60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TK39N60W |
INCHANGE |
N-Channel MOSFET | |
12 | TK39N60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |