TK3904NND03 - WILLAS

TK3904NND03 Plastic-Encapsulate Transistors

optimize board space. power loss, high efficiency. • Low NPN Epitaxial Silicon Transistor • High current capability, low forward voltage drop. FEATURES• High surge capability. for overvoltage protection. • Guardring Epitaxial Planar Die Construction Ultra high-speed switching. • Complementary PNP Type Available (TK3906NND03) • Silicon epitaxial planar chip, .

Features

Package outline WBFBP-03B (1.2×1.2×0.5) unit: mm C Method 2026 RoHS product for packing code suffix ”G”
• Polarity : Indicated by cathode band Halogen free product for packing code suffix “H”
• Mounting Position : Any
• Weight : Approximated 0.011 gram Symbol im SYMBOL FM120-M MAXIMUM RATINGS AND ELECTRICAL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Single phase half wave, 60Hz, resistive of inductive load. Collector-Base Voltage VCBO For capacitive load, derate current by 20%   ina ry C B E V.