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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage.
·With TO-247 packaging
·With low gate drive requirements
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
38.8
IDM
Drain Current-Single Pulsed
155
PD
Total Dissipation
270
Tj
Operating Junction Temperature
-50~150
Tstg
Storage Temperature
-50~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAM.
TK39N60W - Toshiba Semiconductor
MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK39N60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK39N60W5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK39N60X |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TK39N60X |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 6 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 7 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 8 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 9 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | TK39A60W |
INCHANGE |
N-Channel MOSFET |
|
| 11 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 12 | TK39J60W |
INCHANGE |
N-Channel MOSFET |
|