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isc N-Channel MOSFET Transistor TK39N60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.
·Low drain-source on-resistance:
RDS(on) ≤0.074Ω.
·Enhancement mode:
Vth =3 to4.5V (VDS = 10 V, ID=1.9mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
38.8
A
IDM
Drain Current-Single Pulsed
155
A
PD
Total Dissipation @TC=25℃
270
W
Tj
Max. Operating Junction Temperature 150
℃
Tstg
Storage Temperature
-55~150 ℃
·.
TK39N60W5 - Toshiba Semiconductor
TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W5 1. Applications • Switching Voltage Regulators 2. Features .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK39N60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK39N60W |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK39N60X |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TK39N60X |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 6 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 7 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 8 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 9 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | TK39A60W |
INCHANGE |
N-Channel MOSFET |
|
| 11 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 12 | TK39J60W |
INCHANGE |
N-Channel MOSFET |
|