Low power loss, high efficiency. • PNP Epitaxial Silicon Transistor • High current capability, low forward voltage drop. FEATURES• High surge capability. • Guardring for overvoltage protection. Epitaxial Planar Die Construction • Ultra high-speed switching. Complementary NPN Type Available (TK3904NND03) • Silicon epitaxial planar chip, metal silicon junction.
High surge capability.
• Guardring for overvoltage protection. Epitaxial Planar Die Construction
• Ultra high-speed switching. Complementary NPN Type Available (TK3904NND03)
• Silicon epitaxial planar chip, metal silicon junction. Ultra-Small Surface Mount Package parts meet environmental standards of
• Lead-free
Also Available in Lead Free Version MIL-STD-19500 /228
Halogen free product for packing code suffix "H" APPLICATION Mechanical data General Purpose Amplifier, switching For portable
•equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, Epoxy : UL94-V0 rated flame retardant DVD-ROM,
• Note boo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
2 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
3 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors | |
4 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK39A60W |
INCHANGE |
N-Channel MOSFET | |
6 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | TK39J60W |
INCHANGE |
N-Channel MOSFET | |
8 | TK39J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK39J60W5 |
INCHANGE |
N-Channel MOSFET | |
10 | TK39N60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TK39N60W |
INCHANGE |
N-Channel MOSFET | |
12 | TK39N60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |