TK3904NND03 |
Part Number | TK3904NND03 |
Manufacturer | WILLAS |
Description | optimize board space. power loss, high efficiency. • Low NPN Epitaxial Silicon Transistor • High current capability, low forward voltage drop. FEATURES• High surge capability. for overvoltage protecti... |
Features |
Package outline
WBFBP-03B
(1.2×1.2×0.5) unit: mm
C
Method 2026 RoHS product for packing code suffix ”G” • Polarity : Indicated by cathode band Halogen free product for packing code suffix “H” • Mounting Position : Any • Weight : Approximated 0.011 gram Symbol im SYMBOL FM120-M MAXIMUM RATINGS AND ELECTRICAL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Single phase half wave, 60Hz, resistive of inductive load. Collector-Base Voltage VCBO For capacitive load, derate current by 20% ina ry C B E V... |
Document |
TK3904NND03 Data Sheet
PDF 394.61KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
2 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors | |
3 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors | |
4 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK39A60W |
INCHANGE |
N-Channel MOSFET |