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TIM5964-35SLA - Toshiba Semiconductor

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TIM5964-35SLA MICROWAVE POWER GaAs FET

FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-35SLA RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at.

Features

・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-35SLA RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 8.0A f = 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodu.

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