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TIM5964-35SLA |
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| Part Number | TIM5964-35SLA |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single... |
| Features |
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-35SLA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 8.0A f = 5.9 to 6.4GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodu... |
| Document |
 TIM5964-35SLA Data Sheet
PDF 366.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIM5964-35SLA-251 |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET |
|
| 2 | TIM5964-35SLA-422 |
Toshiba |
MICROWAVE POWER GaAs FET |
|
| 3 | TIM5964-30SL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET |
|
| 4 | TIM5964-30UL |
Toshiba |
MICROWAVE POWER GaAs FET |
|
| 5 | TIM5964-12UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET |
|