MICROWAVE POWER GaAs FET TIM5964-45SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at.
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.0A f= 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperatu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIM5964-4A |
Toshiba Semiconductor |
MICROWAVE POWER GAAS FET | |
2 | TIM5964-4SL-422 |
Toshiba |
MICROWAVE POWER GaAs FET | |
3 | TIM5964-4UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
4 | TIM5964-12UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
5 | TIM5964-16SL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
6 | TIM5964-16SL-422 |
Toshiba |
MICROWAVE POWER GaAs FET | |
7 | TIM5964-16UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
8 | TIM5964-25UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
9 | TIM5964-30SL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
10 | TIM5964-30UL |
Toshiba |
MICROWAVE POWER GaAs FET | |
11 | TIM5964-35SLA |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
12 | TIM5964-35SLA-251 |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET |