FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 31.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-16SL-422 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Ou.
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 31.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-16SL-422 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.4A f = 5.85 to 6.75GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIM5964-16SL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
2 | TIM5964-16UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
3 | TIM5964-12UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
4 | TIM5964-25UL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
5 | TIM5964-30SL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
6 | TIM5964-30UL |
Toshiba |
MICROWAVE POWER GaAs FET | |
7 | TIM5964-35SLA |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
8 | TIM5964-35SLA-251 |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
9 | TIM5964-35SLA-422 |
Toshiba |
MICROWAVE POWER GaAs FET | |
10 | TIM5964-45SL |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
11 | TIM5964-4A |
Toshiba Semiconductor |
MICROWAVE POWER GAAS FET | |
12 | TIM5964-4SL-422 |
Toshiba |
MICROWAVE POWER GaAs FET |