TIM5964-35SLA-251 - Toshiba Semiconductor

TIM5964-35SLA-251 MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz „ HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz „ HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz „ BROAD BAND INTERNALLY MAT.

Features

TIM5964-35SLA-251 „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz „ HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz „ HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 ∆G VDS= 10V f = 5.9
  – 6.75GHz CONDITION U.