TIM5964-16UL - Toshiba Semiconductor

TIM5964-16UL MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 31.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power a.

Features

ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 31.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.6A f= 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperat.