TIM5964-30UL - Toshiba

TIM5964-30UL MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current.

Features

･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.4A f = 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.0dBm, f= 5M.