www.vishay.com Si8466EDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking code: xxxx = 8466 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (.
• TrenchFET® power MOSFET
• Typical ESD protection 3000 V HBM
• Ultra small 1 mm x 1 mm maximum outline
• Ultra thin 0.548 mm maximum height
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
• Low on-resistance load switch for portable devices
- Low power consumption, low
voltage drop
G
- Increased battery life
- Space savings on PCB
N-Channel MOSFET S
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
MICRO FOOT Si8466EDB-T2-E1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si8460 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
2 | Si8461 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
3 | Si8461DB |
Vishay Intertechnology |
P-Channel MOSFET | |
4 | Si8462 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
5 | Si8463 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
6 | SI84 |
Delta Electronics |
SMT Power Inductor | |
7 | SI8401DB |
Vishay Siliconix |
P-Channel MOSFET | |
8 | SI8402DB |
Vishay Siliconix |
N-Channel MOSFET | |
9 | Si8404DB |
Vishay |
N-channel MOSFET | |
10 | SI8405DB |
Vishay Siliconix |
P-Channel MOSFET | |
11 | Si8406DB |
Vishay |
N-Channel MOSFET | |
12 | Si8407DB |
Vishay |
P-Channel MOSFET |