SI8402DB - Vishay Siliconix

SI8402DB N-Channel MOSFET

20 V N-Channel 1.8 V (G-S) MOSFET Si8402DB Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.039 at VGS = 2.5 V 0.043 at VGS = 1.8 V ID (A) 7.3 7.1 6.8 MICRO FOOT Bump Side View Backside View 3 D 2 D 8402 xxx S 4 G 1 Device Marking: 8402 xxx = Date/Lot Traceability Code Ordering Information: Si8402DB-T1-E1 (Lead (P.

Features

• TrenchFET® Power MOSFET
• MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• PA, Battery and Load Switch for D Portable Devices G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 7.3 5.3 5.9 4..