Si8461DB - Vishay Intertechnology

Si8461DB P-Channel MOSFET

www.vishay.com Si8461DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.100 at VGS = -4.5 V 0.118 at VGS = -2.5 V 0.140 at VGS = -1.8 V 0.205 at VGS = -1.5 V ID (A) a, e -3.7 -3.4 -3.1 -2 Qg (TYP.) 9.5 nC MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking Code: xx.

Features

• TrenchFET® power MOSFET
• Ultra small 1 mm x 1 mm maximum outline
• Ultra-thin 0.548 mm maximum height
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load switch
• Battery switch
• Charger switch S G P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction .