P-Channel 20 V (D-S) MOSFET Si8407DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.027 at VGS = - 4.5 V - 20 0.032 at VGS = - 2.5 V 0.045 at VGS = - 1.8 V ID (A) - 8.2 - 7.5 - 6.6 MICRO FOOT Bump Side View Backside View 5S S4 6G S3 1D D2 Device Marking: 8407 xxx = Date/Lot Traceability Code Ordering Information: Si8407DB-T2-E1 (Lea.
• Halogen-free according to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• MICRO FOOT® Chipscale Packaging
Reduces Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
- PA Switch - Battery Switch - Load Switch
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 20
V
VGS
±8
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
- 8.2 - 6.5
- 5..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI8401DB |
Vishay Siliconix |
P-Channel MOSFET | |
2 | SI8402DB |
Vishay Siliconix |
N-Channel MOSFET | |
3 | Si8404DB |
Vishay |
N-channel MOSFET | |
4 | SI8405DB |
Vishay Siliconix |
P-Channel MOSFET | |
5 | Si8406DB |
Vishay |
N-Channel MOSFET | |
6 | SI84 |
Delta Electronics |
SMT Power Inductor | |
7 | Si8410 |
Skyworks Solutions |
Single and Dual-Channel Digital Isolator | |
8 | SI8410 |
Silicon Laboratories |
Single and Dual-Channel Digital Isolators | |
9 | Si8410DB |
Vishay |
N-Channel MOSFET | |
10 | SI8411DB |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SI8415DB |
Vishay Siliconix |
P-Channel MOSFET | |
12 | Si8416DB |
Vishay |
N-Channel MOSFET |