www.vishay.com Si8401DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) () 0.065 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.9 -4.1 MICRO FOOT® 1.6 x 1.6 D D2 840x1xx 3 1 1 1.6 mm 4G S Backside View Bump Side View 1.6 mm Marking: 8401 Ordering Information: Si8401DB-T1-E1 (Lead (Pb)-free and halogen-fre.
• TrenchFET® power MOSFET
• MICRO FOOT® chipscale packaging reduces
footprint area profile (0.62 mm) and on-resistance per footprint area
• Pin compatible to industry standard Si3443DV
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
S
• PA, battery, and load switch
• Battery charger switch
• PA switch
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) a Pulsed Drain Current
TA = 25 °C TA = 70 °C
C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI8402DB |
Vishay Siliconix |
N-Channel MOSFET | |
2 | Si8404DB |
Vishay |
N-channel MOSFET | |
3 | SI8405DB |
Vishay Siliconix |
P-Channel MOSFET | |
4 | Si8406DB |
Vishay |
N-Channel MOSFET | |
5 | Si8407DB |
Vishay |
P-Channel MOSFET | |
6 | SI84 |
Delta Electronics |
SMT Power Inductor | |
7 | Si8410 |
Skyworks Solutions |
Single and Dual-Channel Digital Isolator | |
8 | SI8410 |
Silicon Laboratories |
Single and Dual-Channel Digital Isolators | |
9 | Si8410DB |
Vishay |
N-Channel MOSFET | |
10 | SI8411DB |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SI8415DB |
Vishay Siliconix |
P-Channel MOSFET | |
12 | Si8416DB |
Vishay |
N-Channel MOSFET |