Si8460/61/62/63 LOW POWER SIX-CHANNEL DIGITAL ISOLATOR forNotNeRwecDoesmigmnesnded Features High-speed operation Up to 2500 VRMS isolation DC to 150 Mbps 60-year life at rated working No start-up initialization required voltage Wide Operating Supply Voltage: Precise timing (typical) 2.70–5.5 V <10 ns worst case Wide Operating Su.
High-speed operation
Up to 2500 VRMS isolation
DC to 150 Mbps
60-year life at rated working
No start-up initialization required voltage
Wide Operating Supply Voltage:
Precise timing (typical)
2.70
–5.5 V
<10 ns worst case
Wide Operating Supply Voltage:
1.5 ns pulse width distortion
2.70
–5.5V
0.5 ns channel-channel skew
Ultra low power (typical)
2 ns propagation delay skew
5 V Operation:
6 ns minimum pulse width
< 1.6 mA per channel at 1 Mbps
Transient Immunity 25 kV/µs
< 6 mA per channel at 100 Mbps
Wide temperature range
2.70 V Operation:
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si8461 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
2 | Si8461DB |
Vishay Intertechnology |
P-Channel MOSFET | |
3 | Si8462 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
4 | Si8463 |
Silicon Laboratories |
LOW POWER SIX-CHANNEL DIGITAL ISOLATOR | |
5 | Si8466EDB |
Vishay |
N-Channel MOSFET | |
6 | SI84 |
Delta Electronics |
SMT Power Inductor | |
7 | SI8401DB |
Vishay Siliconix |
P-Channel MOSFET | |
8 | SI8402DB |
Vishay Siliconix |
N-Channel MOSFET | |
9 | Si8404DB |
Vishay |
N-channel MOSFET | |
10 | SI8405DB |
Vishay Siliconix |
P-Channel MOSFET | |
11 | Si8406DB |
Vishay |
N-Channel MOSFET | |
12 | Si8407DB |
Vishay |
P-Channel MOSFET |