Si8406DB - Vishay

Si8406DB N-Channel MOSFET

www.vishay.com Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.033 at VGS = 4.5 V 20 0.037 at VGS = 2.5 V 0.042 at VGS = 1.8 V ID (A) 16 e 16 e 15 Qg (TYP.) 7.5 nC MICRO FOOT® 1.5 x 1 S S2 xxxxxxx D3 4 1 1 mm 1 1.5 mm Backside View 6G 5S D Bump Side View Marking Code: xxxx = 8406 xxx = Da.

Features

• TrenchFET® power MOSFET
• Ultra-small 1.5 mm x 1 mm maximum outline
• Ultra-thin 0.59 mm maximum height
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load switch D
• Battery management
• Boost converter Available G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Pow.