Si6465DQ - Vishay

Si6465DQ P-Channel MOSFET

P-Channel 1.8-V (G-S) MOSFET Si6465DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = - 4.5 V - 8 0.017 at VGS = - 2.5 V 0.025 at VGS = - 1.8 V ID (A) ± 8.8 ± 7.4 ± 6.0 FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated RoHS COMPLIANT S* D1 S2 S3 G4 TSSOP-8 Si6465DQ Top View 8D 7S 6S 5D Ordering Information: Si.

Features

• Halogen-free
• TrenchFET® Power MOSFETs: 1.8 V Rated RoHS COMPLIANT S
* D1 S2 S3 G4 TSSOP-8 Si6465DQ Top View 8D 7S 6S 5D Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G
* Source Pins 2, 3, 6 and 7 must be tied common D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C T.