Si6413DQ - Vishay

Si6413DQ P-Channel MOSFET

P-Channel 1.8-V (G-S) MOSFET Si6413DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = - 4.5 V - 20 0.013 at VGS = - 2.5 V 0.016 at VGS = - 1.8 V ID (A) - 8.8 - 7.6 - 6.8 FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • PA Switch • Charger Switch S* RoHS COMPLIANT TSSOP-8 D1 S2 S3 G4 Si6413DQ 8D 7.

Features

• Halogen-free
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch
• PA Switch
• Charger Switch S
* RoHS COMPLIANT TSSOP-8 D1 S2 S3 G4 Si6413DQ 8D 7S 6S 5D Top View Ordering Information: Si6413DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G
* Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 8.8 - 7.0 - 7.2 - 5.7 Pulsed Drain Current (10 µs .