Si6404DQ - Vishay

Si6404DQ N-Channel MOSFET

N-Channel 30-V (D-S) MOSFET Si6404DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.009 at VGS = 10 V 30 0.010 at VGS = 4.5 V 0.014 at VGS = 2.5 V ID (A) 11 10 8.8 FEATURES • Halogen-free • TrenchFET® Power MOSFETS: 2.5 V Rated • 30 V VDS APPLICATIONS • Battery Switch • Charger Switch RoHS COMPLIANT D TSSOP-8 D1 S2 S3 G4 Si6404DQ Top Vi.

Features

• Halogen-free
• TrenchFET® Power MOSFETS: 2.5 V Rated
• 30 V VDS APPLICATIONS
• Battery Switch
• Charger Switch RoHS COMPLIANT D TSSOP-8 D1 S2 S3 G4 Si6404DQ Top View 8D 7S 6S 5D Ordering Information: Si6404DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Source Pins 2, 3, 6 and 7 must be tied common. G S
* N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 11 8.6 8.9 6.9 Pulsed Drain Current (.