Si6433DQ - Fairchild Semiconductor

Si6433DQ 20V P-Channel PowerTrench MOSFET

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Power management • Load switch Features • –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON).

Features

•
  –4.5 A,
  –20 V. RDS(ON) = 47 mΩ @ VGS =
  –4.5 V RDS(ON) = 65 mΩ @ VGS =
  –2.5 V RDS(ON) = 100 mΩ @ VGS =
  –1.8 V
• RDS(ON) rated for use with 1.8 V logic
• Low gate charge (13nC typical)
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package D S S D TSSOP-8 G S S D Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS Drain
  –Source Voltage VGSS ID Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Op.