SI6467BDQ - Vishay Siliconix

SI6467BDQ P-Channel MOSFET

www.DataSheet.co.kr Si6467BDQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0125 @ VGS = -4.5 V -12 0.0155 @ VGS = -2.5 V 0.020 @ VGS = -1.8 V ID (A) -8.0 - 7.0 - 6.0 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6467BDQ A.

Features

on 1” x 1” FR4 Board. Document Number: 72087 S-22382—Rev. A, 30-Dec-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 65 100 43 Maximum 83 120 52 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si6467BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -450 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS -5 V, VGS .