SI6463BDQ - Vishay Siliconix

SI6463BDQ P-Channel MOSFET

P-Channel 1.8 V (G-S) MOSFET Si6463BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.015 at VGS = - 4.5 V - 20 0.020 at VGS = - 2.5 V 0.027 at VGS = - 1.8 V ID (A) - 7.4 - 6.3 - 5.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6463.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC S
* TSSOP-8 D1 S2 S3 G4 Si6463BDQ 8D 7S 6S 5D Top View Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G
* Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.4 - 5.9 - 6.2 - 4.9 Pulsed Drain Cur.