SI6421DQ - Vishay Siliconix

SI6421DQ P-Channel MOSFET

www.DataSheet.co.kr Si6421DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = - 4.5 V - 12 0.0135 @ VGS = - 2.5 V 0.0175 @ VGS = - 1.8 V D TrenchFETr Power MOSFET ID (A) - 9.5 - 8.5 - 7.3 APPLICATIONS D Load Switch S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5.

Features

PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = - 4.5 V - 12 0.0135 @ VGS = - 2.5 V 0.0175 @ VGS = - 1.8 V D TrenchFETr Power MOSFET ID (A) - 9.5 - 8.5 - 7.3 APPLICATIONS D Load Switch S
* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G
* Source Pins 2, 3, 6 and 7 must be tied common. Si6421DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating.