N-Channel 30-V (D-S) Rated MOSFET Si6436DQ Product Summary VDS (V) 30 rDS(on) (W) 0.045 @ VGS = 10 V 0.070 @ VGS = 4.5 V ID (A) "4.4 "3.5 D TSSOP-8 D1D S2 Si6436DQ S3 G4 Top View 8D 7S 6S 5D *Source Pins 2, 3, 6 and 7 G must be tied common. S* N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol .
FaxBack document #70169. A SPICE Model data sheet is available for this product (FaxBack document #70535). Siliconix 7 S-49534—Rev. E, 06-Oct-97 Si6436DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI6433BDQ |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
2 | Si6433DQ |
Vishay |
P-Channel 2.5-V (G-S) MOSFET | |
3 | Si6433DQ |
Fairchild Semiconductor |
20V P-Channel PowerTrench MOSFET | |
4 | SI6434DQ |
Vishay Siliconix |
N-Channel MOSFET | |
5 | Si6435ADQ |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
6 | Si6404DQ |
Vishay |
N-Channel MOSFET | |
7 | Si6413DQ |
Vishay |
P-Channel MOSFET | |
8 | SI6421DQ |
Vishay Siliconix |
P-Channel MOSFET | |
9 | SI6423DQ |
Vishay Siliconix |
P-Channel MOSFET | |
10 | Si6443DQ |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
11 | Si6447DQ |
Vishay |
P-Channel 20-V (D-S) MOSFET | |
12 | Si6459BDQ |
Vishay |
P-Channel 60 V (D-S) MOSFET |