P-Channel 60 V (D-S) MOSFET Si6459BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.115 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) - 2.7 - 2.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6459BDQ 8D 7S 6S 5D Top View Or.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S
*
TSSOP-8
D1 S2 S3 G4
Si6459BDQ
8D 7S 6S 5D
Top View
Ordering Information: Si6459BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 2.7 - 2.2
- 2.2 - 1.8
Pulsed Drain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si6404DQ |
Vishay |
N-Channel MOSFET | |
2 | Si6413DQ |
Vishay |
P-Channel MOSFET | |
3 | SI6421DQ |
Vishay Siliconix |
P-Channel MOSFET | |
4 | SI6423DQ |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SI6433BDQ |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
6 | Si6433DQ |
Vishay |
P-Channel 2.5-V (G-S) MOSFET | |
7 | Si6433DQ |
Fairchild Semiconductor |
20V P-Channel PowerTrench MOSFET | |
8 | SI6434DQ |
Vishay Siliconix |
N-Channel MOSFET | |
9 | Si6435ADQ |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
10 | Si6436DQ |
Vishay |
N-Channel 30-V (D-S) Rated MOSFET | |
11 | Si6443DQ |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
12 | Si6447DQ |
Vishay |
P-Channel 20-V (D-S) MOSFET |