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Si6040 N-Channel Enhancement MOSFET Si6040 Features ·Low On resistance. ·4.5V drive. ·RoHS compliant. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD .
·Low On resistance.
·4.5V drive.
·RoHS compliant.
2,4
Package Dimensions
TO-252
1
3
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
60 +20 12 25 40 40 150 -55~+150
Unit
V V A A W W 0C 0C
Electrical Characteristic.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI60DC100 |
TELEDYNE |
DC Solid-State Relay |
|
| 2 | Si6404DQ |
Vishay |
N-Channel MOSFET |
|
| 3 | Si6413DQ |
Vishay |
P-Channel MOSFET |
|
| 4 | SI6421DQ |
Vishay Siliconix |
P-Channel MOSFET |
|
| 5 | SI6423DQ |
Vishay Siliconix |
P-Channel MOSFET |
|
| 6 | SI6433BDQ |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET |
|
| 7 | Si6433DQ |
Vishay |
P-Channel 2.5-V (G-S) MOSFET |
|
| 8 | Si6433DQ |
Fairchild Semiconductor |
20V P-Channel PowerTrench MOSFET |
|
| 9 | SI6434DQ |
Vishay Siliconix |
N-Channel MOSFET |
|
| 10 | Si6435ADQ |
Vishay |
P-Channel 30-V (D-S) MOSFET |
|
| 11 | Si6436DQ |
Vishay |
N-Channel 30-V (D-S) Rated MOSFET |
|
| 12 | Si6443DQ |
Vishay |
P-Channel 30-V (D-S) MOSFET |
|