Si6040 |
Part Number | Si6040 |
Manufacturer | Nanxin |
Description | Si6040 N-Channel Enhancement MOSFET Si6040 Features ·Low On resistance. ·4.5V drive. ·RoHS compliant. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ratings at Ta=250C Para... |
Features |
·Low On resistance. ·4.5V drive. ·RoHS compliant. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings 60 +20 12 25 40 40 150 -55~+150 Unit V V A A W W 0C 0C Electrical Characteristic... |
Document |
Si6040 Data Sheet
PDF 403.75KB |
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