Si5920DC - Vishay Siliconix

Si5920DC Dual N-Channel 1.5-V (G-S) MOSFET

New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.032 at VGS = 4.5 V 8 0.036 at VGS = 2.5 V 0.045 at VGS = 1.8 V 0.054 at VGS = 1.5 V ID (A) 4a 4a 4a 4a 7.3 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra -low on-resistance in compact, thermally enhanced ChipFET® package RoH.

Features

• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra -low on-resistance in compact, thermally enhanced ChipFET® package RoHS COMPLIANT APPLICATIONS
• Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized design and space savings 1206-8 ChipFET® (Dual) 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 D2 Marking Code CD XXX Part # Code G1 Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View S2 N-Channel MOSFET Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Volta.