www.DataSheet.co.kr New Product Si5905BDC Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) 0.080 at VGS = - 4.5 V 0.117 at VGS = - 2.5 V 0.170 at VGS = - 1.8 V ID (A) - 4a - 4a - 3.5 4 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch for portable devices RoHS COMPLIANT 1206-8 ChipFET® (.
• TrenchFET® Power MOSFETs
APPLICATIONS
• Load Switch for portable devices
RoHS
COMPLIANT
1206-8 ChipFET® (Dual)
1
S1
S1 D1 D1 D2 D2 G1 S2 G2
S2
Marking Code
G1
G2
DH XXX
Lot Traceability and Date Code
Bottom View
Part # Code
D1 P-Channel MOSFET
D2 P-Channel MOSFET
Ordering Information: Si5905BDC-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit -8 ±8 - 4a .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5905DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
2 | SI590 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
3 | SI5902BDC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | SI5902DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
5 | SI5903DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
6 | SI5904DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
7 | SI5906DU |
Vishay Siliconix |
Dual N-Channel MOSFET | |
8 | SI5908DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
9 | SI591 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
10 | SI5915DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
11 | Si5920DC |
Vishay Siliconix |
Dual N-Channel 1.5-V (G-S) MOSFET | |
12 | SI5922DU |
Vishay |
MOSFET |