Dual P-Channel 1.8 V (G-S) MOSFET Si5915DC Vishay Siliconix PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) 0.070 at VGS = - 4.5 V 0.108 at VGS = - 2.5 V 0.162 at VGS = - 1.8 V ID (A) - 4.6 - 3.7 - 3.0 1206-8 ChipFET® 1 S1 D1 D1 G1 S2 D2 G2 D2 Marking Code DE XX Lot Traceability and Date Code Part # Code FEATURES • Halogen-free According to IEC 61249.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance
• 40 % Smaller Footprint than TSOP-6
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch or PA Switch for Portable Devices
S1 S2
G1 G2
Bottom View
Ordering Information: Si5915DC-T1-E3 (Lead (Pb)-free) Si5915DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulse.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI591 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
2 | SI590 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
3 | SI5902BDC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | SI5902DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
5 | SI5903DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
6 | SI5904DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
7 | SI5905BDC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
8 | SI5905DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
9 | SI5906DU |
Vishay Siliconix |
Dual N-Channel MOSFET | |
10 | SI5908DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
11 | Si5920DC |
Vishay Siliconix |
Dual N-Channel 1.5-V (G-S) MOSFET | |
12 | SI5922DU |
Vishay |
MOSFET |