SI5903DC - Vishay Siliconix

SI5903DC Dual P-Channel MOSFET

Dual P-Channel 2.5 V (G-S) MOSFET Si5903DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.155 at VGS = - 4.5 V - 20 0.180 at VGS = - 3.6 V 0.260 at VGS = - 2.5 V ID (A) ± 2.9 ± 2.7 ± 2.2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 D2 G2 Marking Code DA XX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free) Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (T.