SI5908DC - Vishay Siliconix

SI5908DC Dual N-Channel MOSFET

www.DataSheet.co.kr Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) 0.040 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 0.052 @ VGS = 1.8 V ID (A) 5.9 5.6 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Load Switch D PA Switch.

Features

PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) 0.040 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 0.052 @ VGS = 1.8 V ID (A) 5.9 5.6 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Load Switch D PA Switch D Battery Switch D1 D2 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 Marking Code CC XXX Lot Traceability and Date Code G1 G2 Bottom View Part # Code S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si5908DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage .