and Pin 1 identification for the dual-channel 1206-8 ChipFET device. The pin-out is similar to the TSOP-6 configuration, with two additional drain pins to enhance power dissipation and thus thermal performance. The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a larger die to be fitted i.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ®
1
S1 D1 D1 D2 D2 G1 S2 G2
D1
D2
Marking Code CB XX Lot Traceability and Date Code Part # Code S1 S2 N-Channel MOSFET G1 G2
Bottom View
Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free) Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous So.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI590 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
2 | SI5902BDC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
3 | SI5902DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | SI5903DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
5 | SI5905BDC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
6 | SI5905DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
7 | SI5906DU |
Vishay Siliconix |
Dual N-Channel MOSFET | |
8 | SI5908DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
9 | SI591 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
10 | SI5915DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
11 | Si5920DC |
Vishay Siliconix |
Dual N-Channel 1.5-V (G-S) MOSFET | |
12 | SI5922DU |
Vishay |
MOSFET |