www.DataSheet.co.kr Si5902DC Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.085 @ VGS = 10 V 0.143 @ VGS = 4.5 V ID (A) 3.9 3.0 1206-8 ChipFETt 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 D2 G1 Marking Code CA XX Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View Part # Code S2 N-Channel MOSFET Order.
i ta Maximum Junction-to-Foot t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5902BDC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
2 | SI590 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
3 | SI5903DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
4 | SI5904DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
5 | SI5905BDC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
6 | SI5905DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
7 | SI5906DU |
Vishay Siliconix |
Dual N-Channel MOSFET | |
8 | SI5908DC |
Vishay Siliconix |
Dual N-Channel MOSFET | |
9 | SI591 |
Silicon Laboratories |
CRYSTAL OSCILLATOR | |
10 | SI5915DC |
Vishay Siliconix |
Dual P-Channel MOSFET | |
11 | Si5920DC |
Vishay Siliconix |
Dual N-Channel 1.5-V (G-S) MOSFET | |
12 | SI5922DU |
Vishay |
MOSFET |