Si4925DY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.032 @ VGS = - 10 V - 30 0.045 @ VGS = - 4.5 V ID (A) - 6.3 - 5.3 FEATURES D TrenchFETr Power MOSFET S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS .
D TrenchFETr Power MOSFET S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg - 30 "20 - 6.3 - 4.7 - 5.0 - 3.7 - 40 - 1.7 - 0.9 2 1.1 1.3 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4925DDY |
Vishay Siliconix |
Dual P-Channel MOSFET | |
2 | SI4925BDY |
Vishay Siliconix |
Dual P-Channel MOSFET | |
3 | SI4921DY |
Vishay Siliconix |
Dual P-Channel MOSFET | |
4 | Si4922BDY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET | |
5 | SI4922DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
6 | SI4900DY |
Vishay Siliconix |
N-Channel 60-V (D-S) MOSFET | |
7 | SI4904DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
8 | SI4908DY |
Vishay Siliconix |
Dual N-Channel 40-V (D-S) MOSFET | |
9 | SI4910DY |
Vaishali Semiconductor |
Dual N-Channel 40-V (D-S) MOSFET | |
10 | SI4911DY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
11 | SI4913DY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
12 | SI4914BDY |
Vishay Siliconix |
Dual N-Channel MOSFET |