SI4925BDY - Vishay Siliconix

SI4925BDY Dual P-Channel MOSFET

Si4925BDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES ID (A) - 7.1 - 5.5 rDS(on) (W) 0.025 @ VGS = - 10 V 0.041 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ord.

Features

ID (A) - 7.1 - 5.5 rDS(on) (W) 0.025 @ VGS = - 10 V 0.041 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4925BDY Si4925BDY-T1 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Cond.