SI4908DY - Vishay Siliconix

SI4908DY Dual N-Channel 40-V (D-S) MOSFET

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Features

ID (A)a 5.0 4.7 56 5.6 rDS(on) (W) 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V Qg (Typ) D TrenchFETr Power MOSFET D 100 % Rg Tested APPLICATIONS D CCFL Inverter D1 D2 RoHS COMPLIANT www.DataSheet4U.com S1 G1 S2 G2 1 2 3 4 SO-8 8 7 6 5 Top View Ordering Information: Si4908DY-T1
  –E3 (Lead (Pb)
  –free) S1 N-Channel MOSFET S2 N-Channel MOSFET D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current (10 ms Pulse Width) Sou.