Dual N-Channel 40-V (D-S) MOSFET Si4910DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.027 at VGS = 10 V 40 0.032 at VGS = 4.5 V ID (A)a 6.0 4.8 Qg (Typ.) 9.6 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free) Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-fr.
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4911DY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
2 | SI4913DY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET | |
3 | SI4914BDY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | SI4914DY |
Vishay Siliconix |
Dual N-Channel 30-V (D-S) MOSFET | |
5 | SI4916DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
6 | SI4900DY |
Vishay Siliconix |
N-Channel 60-V (D-S) MOSFET | |
7 | SI4904DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
8 | SI4908DY |
Vishay Siliconix |
Dual N-Channel 40-V (D-S) MOSFET | |
9 | SI4921DY |
Vishay Siliconix |
Dual P-Channel MOSFET | |
10 | Si4922BDY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET | |
11 | SI4922DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
12 | SI4925BDY |
Vishay Siliconix |
Dual P-Channel MOSFET |