Si4922BDY - Vishay

Si4922BDY Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Si4922BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.016 at VGS = 10 V 30 0.018 at VGS = 4.5 V 0.024 at VGS = 2.5 V ID (A)a, e 8 8 8 Qg (Typ.) 19 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Compliant to RoHS Directive 2002/95/EC D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (10 µs Pulse Width) TA = 70 °C IDM Source-Drain Current Diode Current Pulsed Sorce-Drain Current TC = 25 °C TA = 25 °C IS ISM Single Pulse Avalanche Current S.