SI4921DY - Vishay Siliconix

SI4921DY Dual P-Channel MOSFET

New Product Dual P-Channel 30-V (D-S) MOSFET Si4921DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 0.025 at VGS = - 10 V 0.042 at VGS = - 4.5 V ID (A) - 7.3 - 5.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4921DY-T1 Si4921DY-T1-E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFET • Advanced High Ce.

Features

• TrenchFET® Power MOSFET
• Advanced High Cell Density Process APPLICATIONS
• Load Switches - Notebook PCs - Desktop PCs - Game Stations
• Battery Switch S1 S2 Pb-free Available RoHS
* COMPLIANT G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.3 - 5.8 - 5.5 - 4.4 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9.