SI4900DY - Vishay Siliconix

SI4900DY N-Channel 60-V (D-S) MOSFET

www.DataSheet4U.com The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-.

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al interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73237 S-50392Rev. A, 14-Mar-05 www.vishay.com 1 SPICE Device Model Si4900DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 2 105 0.046 0.057 16 0.80 Measured Data Unit V.